Sep 2, 2013
– it detects all cracks that extend beyond the material's surface and it can be used to identify and. WootBot, the Woot! .. validation of the PSA date for the crack on the right-hand side of the image (between the 70% and 80% mark).Composite doped germanium nanowires for sensitive detection of biomolecules.
Detection of DNA is an important task for biotechnological applications, environmental monitoring, and DNA-based drugs. High-sensitivity and label-free detection of DNA is a very challenging problem. Herein, we demonstrate a direct DNA sensing method based on composite germanium (Ge) nanowires doped with gold nanoparticles (AuNPs). The Ge nanowires were synthesized by a simple Au-catalyzed vapor-liquid-solid (VLS) growth technique and then further doped with AuNPs by a facile seed-growth approach. The fabricated Ge nanowires doped with AuNPs showed good morphological characteristics and a strong surface plasmonic resonance peak in the visible spectral region (550 nm). Under visible light excitation, the AuNPs in the composite doped Ge nanowires excited surface plasmon resonance and the generated surface plasmon electrons interacted with the biomolecules at the free ends of the nanowires, and resulted in a decrease of the surface plasmon resonance intensity. The composite doped Ge nanowires were utilized for the detection of different target DNA sequences by monitoring the surface plasmon resonance intensity decrease. The sequence-specific DNA detection was achieved by electrostatic binding to complementary DNA on the surface of the doped Ge nanowires. We believe that this simple, direct, label-free and sensitive method for the detection of DNA will be a useful tool for DNA sensing in the future.The present invention relates to a photo mask and a method of manufacturing an integrated circuit using the same. More particularly, the present invention relates to a photo mask suitable for exposing a resist pattern on a semiconductor substrate and a method of manufacturing an integrated circuit using the same.
In recent years, miniaturization of integrated circuits has progressed with the trend toward higher integration. As a result, it has been desired that a line width of a gate electrode pattern or a space between lines be equal to or smaller than a limit determined by a lithography technique. However, in order to manufacture highly be359ba680
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